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Improvement on Photo Diode Well Capacity by Removing Charge Transfer Loss in CMOS Image Sensor

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dc.contributor.authorSung, Man Young-
dc.date.accessioned2021-08-29T04:33:08Z-
dc.date.available2021-08-29T04:33:08Z-
dc.date.created2021-04-22-
dc.date.issued2014-12-10-
dc.identifier.urihttps://scholar.korea.ac.kr/handle/2021.sw.korea/36423-
dc.publisher한국물리학회-
dc.titleImprovement on Photo Diode Well Capacity by Removing Charge Transfer Loss in CMOS Image Sensor-
dc.title.alternative--
dc.typeConference-
dc.contributor.affiliatedAuthorSung, Man Young-
dc.identifier.bibliographicCitationThe 17th International Symposium on the Physics of Semiconductorsr and Applications, pp.316-
dc.relation.isPartOfThe 17th International Symposium on the Physics of Semiconductorsr and Applications-
dc.relation.isPartOfISPSA-
dc.citation.titleThe 17th International Symposium on the Physics of Semiconductorsr and Applications-
dc.citation.startPage316-
dc.citation.endPage316-
dc.citation.conferencePlaceKO-
dc.citation.conferencePlace대한민국 제주도-
dc.citation.conferenceDate2014-12-07-
dc.type.rimsCONF-
dc.description.journalClass2-
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