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On-Chip Stacked Punchthrough Diode Design for 900V power MOSFET Gate ESD Protection

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dc.contributor.authorSung, Man Young-
dc.date.accessioned2021-08-29T06:40:19Z-
dc.date.available2021-08-29T06:40:19Z-
dc.date.created2021-04-22-
dc.date.issued2014-10-30-
dc.identifier.urihttps://scholar.korea.ac.kr/handle/2021.sw.korea/37640-
dc.publisherICSICT-
dc.titleOn-Chip Stacked Punchthrough Diode Design for 900V power MOSFET Gate ESD Protection-
dc.title.alternative--
dc.typeConference-
dc.contributor.affiliatedAuthorSung, Man Young-
dc.identifier.bibliographicCitation2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology, pp.1294 - 1296-
dc.relation.isPartOf2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology-
dc.relation.isPartOfIEEE International Conference on Solid-State and Integrated Circuit Technology-
dc.citation.title2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology-
dc.citation.startPage1294-
dc.citation.endPage1296-
dc.citation.conferencePlaceCC-
dc.citation.conferencePlace중국 Guilin-
dc.citation.conferenceDate2014-10-28-
dc.type.rimsCONF-
dc.description.journalClass1-
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