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Modeling of electrical characteristics using genetic algorithm for low temperature silicon nitride deposited by inner two parallel cylindrical coil ICPCVD
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | PARK KANG-BAK | - |
| dc.date.accessioned | 2021-08-29T09:49:17Z | - |
| dc.date.available | 2021-08-29T09:49:17Z | - |
| dc.date.created | 2021-04-22 | - |
| dc.date.issued | 2014-07-09 | - |
| dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/39528 | - |
| dc.publisher | KVS | - |
| dc.title | Modeling of electrical characteristics using genetic algorithm for low temperature silicon nitride deposited by inner two parallel cylindrical coil ICPCVD | - |
| dc.title.alternative | Modeling of electrical characteristics using genetic algorithm for low temperature silicon nitride deposited by inner two parallel cylindrical coil ICPCVD | - |
| dc.type | Conference | - |
| dc.contributor.affiliatedAuthor | PARK KANG-BAK | - |
| dc.identifier.bibliographicCitation | ICMAP 2014 | - |
| dc.relation.isPartOf | ICMAP 2014 | - |
| dc.relation.isPartOf | ICMAP 2014 abstract | - |
| dc.citation.title | ICMAP 2014 | - |
| dc.citation.conferencePlace | KO | - |
| dc.citation.conferenceDate | 2014-07-08 | - |
| dc.type.rims | CONF | - |
| dc.description.journalClass | 1 | - |
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