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IGBT Buffer layer 농도에 따른 Leakage Current의 변화
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Sung, Man Young | - |
| dc.date.accessioned | 2021-08-29T10:02:23Z | - |
| dc.date.available | 2021-08-29T10:02:23Z | - |
| dc.date.created | 2021-04-22 | - |
| dc.date.issued | 2014-06-26 | - |
| dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/39741 | - |
| dc.publisher | 한국전기전자재료학회 | - |
| dc.title | IGBT Buffer layer 농도에 따른 Leakage Current의 변화 | - |
| dc.title.alternative | Change of Leakage Current According to concentration of IGBT Buffer Layer | - |
| dc.type | Conference | - |
| dc.contributor.affiliatedAuthor | Sung, Man Young | - |
| dc.identifier.bibliographicCitation | 2014년도 한국전기전자재료학회 하계학술대회 | - |
| dc.relation.isPartOf | 2014년도 한국전기전자재료학회 하계학술대회 | - |
| dc.relation.isPartOf | 한국전기전자재료학회 | - |
| dc.citation.title | 2014년도 한국전기전자재료학회 하계학술대회 | - |
| dc.citation.conferencePlace | KO | - |
| dc.citation.conferencePlace | 대한민국 강원도 속초 | - |
| dc.citation.conferenceDate | 2014-06-25 | - |
| dc.type.rims | CONF | - |
| dc.description.journalClass | 2 | - |
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