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Design consideration of Bipolar-Enhanced Tunneling FET
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Ji-Woon Yang | - |
| dc.date.accessioned | 2021-08-29T14:23:51Z | - |
| dc.date.available | 2021-08-29T14:23:51Z | - |
| dc.date.created | 2021-04-22 | - |
| dc.date.issued | 2013-12-19 | - |
| dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/42169 | - |
| dc.publisher | 대한전자공학회 | - |
| dc.title | Design consideration of Bipolar-Enhanced Tunneling FET | - |
| dc.title.alternative | Design consideration of Bipolar-Enhanced Tunneling FET | - |
| dc.type | Conference | - |
| dc.contributor.affiliatedAuthor | Ji-Woon Yang | - |
| dc.identifier.bibliographicCitation | 2013 대한전자공학회 학술심포지움 | - |
| dc.relation.isPartOf | 2013 대한전자공학회 학술심포지움 | - |
| dc.relation.isPartOf | 2013 대한전자공학회 학술심포지움 논문집 | - |
| dc.citation.title | 2013 대한전자공학회 학술심포지움 | - |
| dc.citation.conferencePlace | KO | - |
| dc.citation.conferenceDate | 2013-12-19 | - |
| dc.type.rims | CONF | - |
| dc.description.journalClass | 2 | - |
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