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Neural network modeling of electrical characteristics for low temperature silicon nitride deposited by inner two parallel coil ICPCVD
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | PARK KANG-BAK | - |
| dc.date.accessioned | 2021-08-29T16:50:33Z | - |
| dc.date.available | 2021-08-29T16:50:33Z | - |
| dc.date.created | 2021-04-22 | - |
| dc.date.issued | 2013-07-11 | - |
| dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/43832 | - |
| dc.publisher | nano technology research association | - |
| dc.title | Neural network modeling of electrical characteristics for low temperature silicon nitride deposited by inner two parallel coil ICPCVD | - |
| dc.title.alternative | Neural network modeling of electrical characteristics for low temperature silicon nitride deposited by inner two parallel coil ICPCVD | - |
| dc.type | Conference | - |
| dc.contributor.affiliatedAuthor | PARK KANG-BAK | - |
| dc.identifier.bibliographicCitation | The 11th NANO KOREA 2013 Symposium | - |
| dc.relation.isPartOf | The 11th NANO KOREA 2013 Symposium | - |
| dc.relation.isPartOf | NANO Korea 2013 abstract | - |
| dc.citation.title | The 11th NANO KOREA 2013 Symposium | - |
| dc.citation.conferencePlace | KO | - |
| dc.citation.conferencePlace | Seoul(COEX) | - |
| dc.citation.conferenceDate | 2013-07-10 | - |
| dc.type.rims | CONF | - |
| dc.description.journalClass | 1 | - |
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