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Control of dislocation density of GaN used Epitaxial Lateral Overgrowth with carbonized PR mask
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | BYUN, Dong Jin | - |
| dc.date.accessioned | 2021-08-29T16:54:02Z | - |
| dc.date.available | 2021-08-29T16:54:02Z | - |
| dc.date.created | 2021-04-22 | - |
| dc.date.issued | 2013-07-03 | - |
| dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/43917 | - |
| dc.publisher | 한국물리학회 | - |
| dc.title | Control of dislocation density of GaN used Epitaxial Lateral Overgrowth with carbonized PR mask | - |
| dc.title.alternative | Control of dislocation density of GaN used Epitaxial Lateral Overgrowth with carbonized PR mask | - |
| dc.type | Conference | - |
| dc.contributor.affiliatedAuthor | BYUN, Dong Jin | - |
| dc.identifier.bibliographicCitation | The 16th International Symposium on the Physics of Semiconductors and Applications | - |
| dc.relation.isPartOf | The 16th International Symposium on the Physics of Semiconductors and Applications | - |
| dc.relation.isPartOf | The 16th International Symposium on the Physics of Semiconductors and Applications | - |
| dc.citation.title | The 16th International Symposium on the Physics of Semiconductors and Applications | - |
| dc.citation.conferencePlace | KO | - |
| dc.citation.conferenceDate | 2013-07-02 | - |
| dc.type.rims | CONF | - |
| dc.description.journalClass | 1 | - |
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