Field effect transistor characteristics of graphene with bandgap formed by manganese oxide doping
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Cheol Jin Lee | - |
dc.date.accessioned | 2021-08-29T16:54:39Z | - |
dc.date.available | 2021-08-29T16:54:39Z | - |
dc.date.created | 2021-04-22 | - |
dc.date.issued | 2013-07-01 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/43932 | - |
dc.publisher | 대한전자공학회 | - |
dc.title | Field effect transistor characteristics of graphene with bandgap formed by manganese oxide doping | - |
dc.title.alternative | Field effect transistor characteristics of graphene with bandgap formed by manganese oxide doping | - |
dc.type | Conference | - |
dc.contributor.affiliatedAuthor | Cheol Jin Lee | - |
dc.identifier.bibliographicCitation | The 28th International Technical Conference on Circuits_Systems | - |
dc.relation.isPartOf | The 28th International Technical Conference on Circuits_Systems | - |
dc.relation.isPartOf | The 28th International Technical Conference on Circuits_Systems | - |
dc.citation.title | The 28th International Technical Conference on Circuits_Systems | - |
dc.citation.conferencePlace | KO | - |
dc.citation.conferenceDate | 2013-06-30 | - |
dc.type.rims | CONF | - |
dc.description.journalClass | 1 | - |
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