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Field effect transistor characteristics of graphene with bandgap formed by manganese oxide doping

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dc.contributor.authorCheol Jin Lee-
dc.date.accessioned2021-08-29T16:54:39Z-
dc.date.available2021-08-29T16:54:39Z-
dc.date.created2021-04-22-
dc.date.issued2013-07-01-
dc.identifier.urihttps://scholar.korea.ac.kr/handle/2021.sw.korea/43932-
dc.publisher대한전자공학회-
dc.titleField effect transistor characteristics of graphene with bandgap formed by manganese oxide doping-
dc.title.alternativeField effect transistor characteristics of graphene with bandgap formed by manganese oxide doping-
dc.typeConference-
dc.contributor.affiliatedAuthorCheol Jin Lee-
dc.identifier.bibliographicCitationThe 28th International Technical Conference on Circuits_Systems-
dc.relation.isPartOfThe 28th International Technical Conference on Circuits_Systems-
dc.relation.isPartOfThe 28th International Technical Conference on Circuits_Systems-
dc.citation.titleThe 28th International Technical Conference on Circuits_Systems-
dc.citation.conferencePlaceKO-
dc.citation.conferenceDate2013-06-30-
dc.type.rimsCONF-
dc.description.journalClass1-
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