Detailed Information
Cited 0 time in 
Cited 0 time in 
Cited 0 time in
Metadata Downloads
Effect of inductively coupled plasma on the properties of ITO source/drain electrode for ZnO-based thin-film transistorsEffect of inductively coupled plasma on the properties of ITO source/drain electrode for ZnO-based thin-film transistors
- Alternative Title
- Effect of inductively coupled plasma on the properties of ITO source/drain electrode for ZnO-based thin-film transistors
- Authors
- Ju, Byeongkwon
- Issue Date
- 1-4월-2013
- Publisher
- Materials Research Society
- Citation
- MRS 2013
- Conference Name
- MRS 2013
- Place
- US
- Conference Date
- 2013-04-01
- Files in This Item
- There are no files associated with this item.
- Appears in
Collections - College of Engineering > School of Electrical Engineering > 2. Conference Papers
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.