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낸드 플래시 메모리 저장 장치에서 셀 문턱 전압 분포를 반영한 Sensing-Level 예측 방법

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dc.contributor.authorJun-Geol Baek-
dc.date.accessioned2021-08-27T09:57:01Z-
dc.date.available2021-08-27T09:57:01Z-
dc.date.created2021-05-20-
dc.date.issued2020-11-13-
dc.identifier.urihttps://scholar.korea.ac.kr/handle/2021.sw.korea/4491-
dc.publisher대한산업공학회-
dc.title낸드 플래시 메모리 저장 장치에서 셀 문턱 전압 분포를 반영한 Sensing-Level 예측 방법-
dc.title.alternative낸드 플래시 메모리 저장 장치에서 셀 문턱 전압 분포를 반영한 Sensing-Level 예측 방법-
dc.typeConference-
dc.contributor.affiliatedAuthorJun-Geol Baek-
dc.identifier.bibliographicCitation2020 대한산업공학회 추계학술대회-
dc.relation.isPartOf2020 대한산업공학회 추계학술대회-
dc.relation.isPartOf2020 대한산업공학회 추계학술대회-
dc.citation.title2020 대한산업공학회 추계학술대회-
dc.citation.conferencePlaceKO-
dc.citation.conferencePlace서울과학기술대학교-
dc.citation.conferenceDate2020-11-13-
dc.type.rimsCONF-
dc.description.journalClass2-
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