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Comparison of the Properties of GaN Film Grown on Patterned Sapphire Substrate with Different Pattern Designs

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dc.contributor.authorBYUN, Dong Jin-
dc.date.accessioned2021-08-29T19:36:13Z-
dc.date.available2021-08-29T19:36:13Z-
dc.date.created2021-04-22-
dc.date.issued2012-10-15-
dc.identifier.urihttps://scholar.korea.ac.kr/handle/2021.sw.korea/45441-
dc.publisherInternational Workshop on Nitride Semiconductors-
dc.titleComparison of the Properties of GaN Film Grown on Patterned Sapphire Substrate with Different Pattern Designs-
dc.title.alternativeComparison of the Properties of GaN Film Grown on Patterned Sapphire Substrate with Different Pattern Designs-
dc.typeConference-
dc.contributor.affiliatedAuthorBYUN, Dong Jin-
dc.identifier.bibliographicCitationInternational Workshop on Nitride Semiconductors 2012-
dc.relation.isPartOfInternational Workshop on Nitride Semiconductors 2012-
dc.relation.isPartOfInternational Workshop on Nitride Semiconductors 2012-
dc.citation.titleInternational Workshop on Nitride Semiconductors 2012-
dc.citation.conferencePlaceJA-
dc.citation.conferenceDate2012-10-14-
dc.type.rimsCONF-
dc.description.journalClass1-
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