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Magnetic tunnel junctions with perpendicular magnetic anisotropy for MRAM applications

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dc.contributor.authorKim, Young Keun-
dc.date.accessioned2021-08-29T19:51:10Z-
dc.date.available2021-08-29T19:51:10Z-
dc.date.created2021-04-22-
dc.date.issued2012-08-16-
dc.identifier.urihttps://scholar.korea.ac.kr/handle/2021.sw.korea/45635-
dc.publisherNANO KOREA-
dc.titleMagnetic tunnel junctions with perpendicular magnetic anisotropy for MRAM applications-
dc.title.alternativeMagnetic tunnel junctions with perpendicular magnetic anisotropy for MRAM applications-
dc.typeConference-
dc.contributor.affiliatedAuthorKim, Young Keun-
dc.identifier.bibliographicCitationThe 10th International Nanotech Symposium & Nano-Convergence Expo-
dc.relation.isPartOfThe 10th International Nanotech Symposium & Nano-Convergence Expo-
dc.relation.isPartOfNANO Korea 2012-
dc.citation.titleThe 10th International Nanotech Symposium & Nano-Convergence Expo-
dc.citation.conferencePlaceKO-
dc.citation.conferenceDate2012-08-16-
dc.type.rimsCONF-
dc.description.journalClass1-
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공과대학 (신소재공학부)
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