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Write Margin Variability and VCCmin Projection of 6T SRAM with Double-Gate MOSFETs down to Lmin=8nmWrite Margin Variability and VCCmin Projection of 6T SRAM with Double-Gate MOSFETs down to Lmin=8nm
- Alternative Title
- Write Margin Variability and VCCmin Projection of 6T SRAM with Double-Gate MOSFETs down to Lmin=8nm
- Authors
- Ji-Woon Yang
- Issue Date
- 17-2월-2012
- Publisher
- 대한전자공학회
- Citation
- 제19회 한국반도체학술대회
- Conference Name
- 제19회 한국반도체학술대회
- Place
- KO
- Conference Date
- 2012-02-15
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