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Effect of SiNx interlayer inserted in a-plane GaN on r-plane sapphire grown by metal-orgarnic chemical vapor deposition
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | PARK, JUNG HO | - |
| dc.date.accessioned | 2021-08-29T21:29:00Z | - |
| dc.date.available | 2021-08-29T21:29:00Z | - |
| dc.date.created | 2021-04-22 | - |
| dc.date.issued | 2011-10-14 | - |
| dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/46482 | - |
| dc.publisher | MTS/IEEE | - |
| dc.title | Effect of SiNx interlayer inserted in a-plane GaN on r-plane sapphire grown by metal-orgarnic chemical vapor deposition | - |
| dc.title.alternative | Effect of SiNx interlayer inserted in a-plane GaN on r-plane sapphire grown by metal-orgarnic chemical vapor deposition | - |
| dc.type | Conference | - |
| dc.contributor.affiliatedAuthor | PARK, JUNG HO | - |
| dc.identifier.bibliographicCitation | IMID 2011 | - |
| dc.relation.isPartOf | IMID 2011 | - |
| dc.relation.isPartOf | IMID 2011 | - |
| dc.citation.title | IMID 2011 | - |
| dc.citation.conferencePlace | KO | - |
| dc.citation.conferenceDate | 2011-10-11 | - |
| dc.type.rims | CONF | - |
| dc.description.journalClass | 1 | - |
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Collections - College of Engineering > School of Electrical Engineering > 2. Conference Papers
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