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Tunable control over the ionization state of single Mn acceptors in GaAs with defect-induced band bending

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dc.contributor.authorDonghun Lee-
dc.date.accessioned2021-08-29T21:53:39Z-
dc.date.available2021-08-29T21:53:39Z-
dc.date.created2021-04-22-
dc.date.issued2011-03-21-
dc.identifier.urihttps://scholar.korea.ac.kr/handle/2021.sw.korea/46881-
dc.publisherAmerican Physical Society-
dc.titleTunable control over the ionization state of single Mn acceptors in GaAs with defect-induced band bending-
dc.title.alternativeTunable control over the ionization state of single Mn acceptors in GaAs with defect-induced band bending-
dc.typeConference-
dc.contributor.affiliatedAuthorDonghun Lee-
dc.identifier.bibliographicCitationAnnual Meeting of the American Physical Society-
dc.relation.isPartOfAnnual Meeting of the American Physical Society-
dc.relation.isPartOf초록집-
dc.citation.titleAnnual Meeting of the American Physical Society-
dc.citation.conferencePlaceUS-
dc.citation.conferenceDate2011-03-21-
dc.type.rimsCONF-
dc.description.journalClass1-
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