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Magnetic tunnel junctions consisting of amorphous NiFeSiB layers
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Kim, Young Keun | - |
| dc.date.accessioned | 2021-08-29T22:28:04Z | - |
| dc.date.available | 2021-08-29T22:28:04Z | - |
| dc.date.created | 2021-04-22 | - |
| dc.date.issued | 2010-10-29 | - |
| dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/47056 | - |
| dc.publisher | Taiwan Information Storage Association | - |
| dc.title | Magnetic tunnel junctions consisting of amorphous NiFeSiB layers | - |
| dc.title.alternative | Magnetic tunnel junctions consisting of amorphous NiFeSiB layers | - |
| dc.type | Conference | - |
| dc.contributor.affiliatedAuthor | Kim, Young Keun | - |
| dc.identifier.bibliographicCitation | Asia-Pacific Data Storage Conference | - |
| dc.relation.isPartOf | Asia-Pacific Data Storage Conference | - |
| dc.relation.isPartOf | Asia-Pacific Data Storage Conference | - |
| dc.citation.title | Asia-Pacific Data Storage Conference | - |
| dc.citation.conferencePlace | CH | - |
| dc.citation.conferenceDate | 2010-10-27 | - |
| dc.type.rims | CONF | - |
| dc.description.journalClass | 1 | - |
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