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Epitaxial lateral over growth of GaN on sapphire substrates using in-situ carbonized photoresist mask epitaxial
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | BYUN, Dong Jin | - |
| dc.date.accessioned | 2021-08-29T22:32:57Z | - |
| dc.date.available | 2021-08-29T22:32:57Z | - |
| dc.date.created | 2021-04-22 | - |
| dc.date.issued | 2010-08-24 | - |
| dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/47162 | - |
| dc.publisher | IUMRS | - |
| dc.title | Epitaxial lateral over growth of GaN on sapphire substrates using in-situ carbonized photoresist mask epitaxial | - |
| dc.title.alternative | Epitaxial lateral over growth of GaN on sapphire substrates using in-situ carbonized photoresist mask epitaxial | - |
| dc.type | Conference | - |
| dc.contributor.affiliatedAuthor | BYUN, Dong Jin | - |
| dc.identifier.bibliographicCitation | International Union of Materials Research Societies International Conference on Electronic Materials 2010 | - |
| dc.relation.isPartOf | International Union of Materials Research Societies International Conference on Electronic Materials 2010 | - |
| dc.relation.isPartOf | IUMRS-ICEM210 | - |
| dc.citation.title | International Union of Materials Research Societies International Conference on Electronic Materials 2010 | - |
| dc.citation.conferencePlace | KO | - |
| dc.citation.conferenceDate | 2010-08-22 | - |
| dc.type.rims | CONF | - |
| dc.description.journalClass | 1 | - |
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