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Epitaxial lateral over growth of GaN on sapphire substrate using in-situ carbonized photoresist mask

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dc.contributor.authorBYUN, Dong Jin-
dc.date.accessioned2021-08-29T22:33:07Z-
dc.date.available2021-08-29T22:33:07Z-
dc.date.created2021-04-22-
dc.date.issued2010-08-23-
dc.identifier.urihttps://scholar.korea.ac.kr/handle/2021.sw.korea/47166-
dc.publisherMRS KOREA-
dc.titleEpitaxial lateral over growth of GaN on sapphire substrate using in-situ carbonized photoresist mask-
dc.title.alternativeEpitaxial lateral over growth of GaN on sapphire substrate using in-situ carbonized photoresist mask-
dc.typeConference-
dc.contributor.affiliatedAuthorBYUN, Dong Jin-
dc.identifier.bibliographicCitationInternational Conference on Electronic Materials 2010 presented by International Union of Materials Research Societies-
dc.relation.isPartOfInternational Conference on Electronic Materials 2010 presented by International Union of Materials Research Societies-
dc.relation.isPartOfInternational Conference on Electronic Materials 2010 presented by International Union of Materials Research Societies-
dc.citation.titleInternational Conference on Electronic Materials 2010 presented by International Union of Materials Research Societies-
dc.citation.conferencePlaceKO-
dc.citation.conferenceDate2010-08-22-
dc.type.rimsCONF-
dc.description.journalClass1-
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