Detailed Information
Cited 0 time in 
Cited 0 time in 
Cited 0 time in
Metadata Downloads
Atomic scale gate electrode formed by a charged defect on GaAs(110)
Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Donghun Lee | - |
| dc.date.accessioned | 2021-08-29T22:35:42Z | - |
| dc.date.available | 2021-08-29T22:35:42Z | - |
| dc.date.created | 2021-04-22 | - |
| dc.date.issued | 2010-06-24 | - |
| dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/47225 | - |
| dc.publisher | TMS | - |
| dc.title | Atomic scale gate electrode formed by a charged defect on GaAs(110) | - |
| dc.title.alternative | Atomic scale gate electrode formed by a charged defect on GaAs(110) | - |
| dc.type | Conference | - |
| dc.contributor.affiliatedAuthor | Donghun Lee | - |
| dc.identifier.bibliographicCitation | EMC(Electronic Materials Conference) 2010 | - |
| dc.relation.isPartOf | EMC(Electronic Materials Conference) 2010 | - |
| dc.relation.isPartOf | 초록집 | - |
| dc.citation.title | EMC(Electronic Materials Conference) 2010 | - |
| dc.citation.conferencePlace | US | - |
| dc.citation.conferenceDate | 2010-06-23 | - |
| dc.type.rims | CONF | - |
| dc.description.journalClass | 1 | - |
- Files in This Item
- There are no files associated with this item.
- Appears in
Collections - College of Science > Department of Physics > 2. Conference Papers
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.