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Atomic scale gate electrode formed by a charged defect on GaAs(110)
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Donghun Lee | - |
| dc.date.accessioned | 2021-08-29T22:47:39Z | - |
| dc.date.available | 2021-08-29T22:47:39Z | - |
| dc.date.created | 2021-04-22 | - |
| dc.date.issued | 2010-03-17 | - |
| dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/47351 | - |
| dc.publisher | American Physical Society | - |
| dc.title | Atomic scale gate electrode formed by a charged defect on GaAs(110) | - |
| dc.title.alternative | Atomic scale gate electrode formed by a charged defect on GaAs(110) | - |
| dc.type | Conference | - |
| dc.contributor.affiliatedAuthor | Donghun Lee | - |
| dc.identifier.bibliographicCitation | Annual Meeting of the American Physical Society | - |
| dc.relation.isPartOf | Annual Meeting of the American Physical Society | - |
| dc.relation.isPartOf | 초록집 | - |
| dc.citation.title | Annual Meeting of the American Physical Society | - |
| dc.citation.conferencePlace | US | - |
| dc.citation.conferenceDate | 2010-03-15 | - |
| dc.type.rims | CONF | - |
| dc.description.journalClass | 1 | - |
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