Improving Performance of GaAs-Based Vertical-Cavity Surface-Emitting Lasers by Employing Thermally Conductive Metal Substrate
DC Field | Value | Language |
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dc.contributor.author | Yum, Woong-Sun | - |
dc.contributor.author | Lee, Sang-Youl | - |
dc.contributor.author | Kim, Myung-Sub | - |
dc.contributor.author | Yoon, Su-Jung | - |
dc.contributor.author | Oh, Jeong-Tak | - |
dc.contributor.author | Jeong, Hwan-Hee | - |
dc.contributor.author | Seong, Tae-Yeon | - |
dc.date.accessioned | 2021-08-30T04:29:32Z | - |
dc.date.available | 2021-08-30T04:29:32Z | - |
dc.date.created | 2021-06-19 | - |
dc.date.issued | 2021-01-01 | - |
dc.identifier.issn | 2162-8769 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/50175 | - |
dc.description.abstract | We investigated the effect of the conducting substrate on the performance of GaAs-based VCSELs, where the substrates were 230 mu m-GaAs (reference), 10 mu m-GaAs/metal, and 0.5 mu m-GaAs/metal. The VCSELs with the 10 mu m- and 0.5 mu m thick GaAs/metal-substrates produced higher light output power than the reference. For example, the thin GaAs/metal substrate samples showed 16.3%-16.7% higher light output power at 3.0 A than the reference. It was shown that the thin GaAs samples produced 12.2%-14.0% higher power conversion efficiency at 3.0 A than the reference. At a high current region, the metal-substrate samples yielded lower junction temperature than the reference, namely, the thin GaAs samples gave 42 degrees C-47.4 degrees C lower junction temperature at 2.0 A than the reference. Further, the thin GaAs samples revealed better light output degradation characteristics than the reference. For instance, the light output of the reference was degraded by 30.2% at 85 degrees C, whereas the thin GaAs samples were degraded by 20.1%-20.5%. Near-field images and emission profiles demonstrated that the metal-substrate samples suffered from no damage incurred during the VCSEL fabrication process. (c) 2021 The Electrochemical Society ("ECS"). Published on behalf of ECS by IOP Publishing Limited. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | ELECTROCHEMICAL SOC INC | - |
dc.subject | TRANSVERSE-MODES | - |
dc.subject | VCSELS | - |
dc.subject | MANAGEMENT | - |
dc.subject | POWER | - |
dc.title | Improving Performance of GaAs-Based Vertical-Cavity Surface-Emitting Lasers by Employing Thermally Conductive Metal Substrate | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Seong, Tae-Yeon | - |
dc.identifier.doi | 10.1149/2162-8777/abd886 | - |
dc.identifier.scopusid | 2-s2.0-85100112764 | - |
dc.identifier.wosid | 000609427700001 | - |
dc.identifier.bibliographicCitation | ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, v.10, no.1 | - |
dc.relation.isPartOf | ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY | - |
dc.citation.title | ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY | - |
dc.citation.volume | 10 | - |
dc.citation.number | 1 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | TRANSVERSE-MODES | - |
dc.subject.keywordPlus | VCSELS | - |
dc.subject.keywordPlus | MANAGEMENT | - |
dc.subject.keywordPlus | POWER | - |
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