A Comparison Study on Multilayered Barrier Oxide Structure in Charge Trap Flash for Synaptic Operation
- Authors
- Kim, Minkyung; Park, Eunpyo; Kim, In Soo; Park, Jongkil; Kim, Jaewook; Jeong, YeonJoo; Lee, Suyoun; Kim, Inho; Park, Jong-Keuk; Seong, Tae-Yeon; Kwak, Joon Young
- Issue Date
- 1월-2021
- Publisher
- MDPI
- Keywords
- synaptic device; neuromorphic; charge trap flash; multilayered oxide film; MoS2
- Citation
- CRYSTALS, v.11, no.1, pp.1 - 7
- Indexed
- SCIE
SCOPUS
- Journal Title
- CRYSTALS
- Volume
- 11
- Number
- 1
- Start Page
- 1
- End Page
- 7
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/50187
- DOI
- 10.3390/cryst11010070
- ISSN
- 2073-4352
- Abstract
- A synaptic device that contains weight information between two neurons is one of the essential components in a neuromorphic system, which needs highly linear and symmetric characteristics of weight update. In this study, a charge trap flash (CTF) memory device with a multilayered high-kappa barrier oxide structure on the MoS2 channel is proposed. The fabricated device was oxide-engineered on the barrier oxide layers to achieve improved synaptic functions. A comparison study between two fabricated devices with different barrier oxide materials (Al2O3 and SiO2) suggests that a high-kappa barrier oxide structure improves the synaptic operations by demonstrating the increased on/off ratio and symmetry of synaptic weight updates due to a better coupling ratio. Lastly, the fabricated device has demonstrated reliable potentiation and depression behaviors and spike-timing-dependent plasticity (STDP) for use in a spiking neural network (SNN) neuromorphic system.
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Collections - College of Engineering > Department of Materials Science and Engineering > 1. Journal Articles
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