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Effect of thermal annealing on the properties of ZnO thin films

Authors
Lim, Weon CheolSingh, Jitendra PalKim, YounghakSong, JonghanChae, Keun HwaSeong, Tae-Yeon
Issue Date
1월-2021
Publisher
PERGAMON-ELSEVIER SCIENCE LTD
Keywords
ZnO; Annealing temperature; X-ray absorption spectroscopy; X-ray magnetic circular dichroism
Citation
VACUUM, v.183
Indexed
SCIE
SCOPUS
Journal Title
VACUUM
Volume
183
URI
https://scholar.korea.ac.kr/handle/2021.sw.korea/50255
DOI
10.1016/j.vacuum.2020.109776
ISSN
0042-207X
Abstract
This work reports the effect of thermal annealing ranging from 0 to 800 degrees C on the various properties of zinc oxide thin film grown using radio-frequency sputtering. X-ray diffraction studies reveal the relaxation of stress up to thermal annealing of 400 degrees C and induction of residual stress thereafter. Zn K-edge X-ray absorption spectroscopic measurements reveal the variation of Zn-O and Zn-Zn bond distances with annealing temperature. Variation of coordination number with annealing temperature shows onset of oxygen vacancies at lower annealing temperatures. These vacancies and defects are also supported by the photoluminescence measurements. The optical band-gap of these films exhibit a significant variation with annealing temperature, which is in-line with the variation of crystallite size. Further, the magnetic behavior of these films is observed to follow the behavior of O 2p states along with defects as investigated from the X-ray magnetic circular dichroism.
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공과대학 (신소재공학부)
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