Highly selective ozone-treated beta-Ga2O3 solar-blind deep-UV photodetectors
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, Suhyun | - |
dc.contributor.author | Kim, Jihyun | - |
dc.date.accessioned | 2021-08-30T05:18:54Z | - |
dc.date.available | 2021-08-30T05:18:54Z | - |
dc.date.created | 2021-06-18 | - |
dc.date.issued | 2020-12-28 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/50754 | - |
dc.description.abstract | The ultra-wide energy bandgap (4.6-4.9eV) of the beta-Ga2O3 semiconductor offers intrinsic solar blindness, which is a great advantage as the absorber material of a deep ultraviolet (UV) photodetector. Although the band-to-band excitation transition in beta-Ga2O3 is allowed solely by the UV-C wavelength, the defective sites including oxygen vacancies can induce sub-bandgap absorption, resulting in high background noise. The UV-ozone treatment was performed at elevated temperatures to investigate its effect on removing these oxygen vacancies; it creates reactive oxygen radicals that can reach the beta-Ga2O3 lattice and passivate the defective sites. The chemical analysis through x-ray photoelectron and micro-Raman spectroscopies revealed an increase in Ga-O bonding after UV-ozone treatment. The optoelectrical measurements on the beta-Ga2O3 UV-C photodetectors showed that the UV-ozone treatment significantly decreased the response to UV-A light. Thus, the photodetector performance (photo-to-dark current ratio, responsivity, detectivity, and rejection ratio) was greatly enhanced; especially, the rejection ratio was increased to 4.56x10(8) by eight orders of magnitude after UV-ozone treatment. The remarkably improved UV-C selectivity in the beta-Ga2O3 solar-blind photodetector highlights its potential of realizing truly solar-blind photodetectors using a simple UV-ozone treatment technique. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | AMER INST PHYSICS | - |
dc.subject | ULTRAVIOLET PHOTODETECTORS | - |
dc.subject | THIN-FILM | - |
dc.subject | PERFORMANCE | - |
dc.title | Highly selective ozone-treated beta-Ga2O3 solar-blind deep-UV photodetectors | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Jihyun | - |
dc.identifier.doi | 10.1063/5.0030400 | - |
dc.identifier.scopusid | 2-s2.0-85099216599 | - |
dc.identifier.wosid | 000608049300001 | - |
dc.identifier.bibliographicCitation | APPLIED PHYSICS LETTERS, v.117, no.26 | - |
dc.relation.isPartOf | APPLIED PHYSICS LETTERS | - |
dc.citation.title | APPLIED PHYSICS LETTERS | - |
dc.citation.volume | 117 | - |
dc.citation.number | 26 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | ULTRAVIOLET PHOTODETECTORS | - |
dc.subject.keywordPlus | THIN-FILM | - |
dc.subject.keywordPlus | PERFORMANCE | - |
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