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Analysis on Structural, Electrical and Optical Properties of Pulsed Laser Deposited HfO_2 Films for Gate Dielectic Material of Transparent TFTs

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dc.contributor.authorMoon Byung-Moo-
dc.date.accessioned2021-08-30T06:26:42Z-
dc.date.available2021-08-30T06:26:42Z-
dc.date.created2021-04-22-
dc.date.issued2009-04-15-
dc.identifier.urihttps://scholar.korea.ac.kr/handle/2021.sw.korea/51111-
dc.publisherThe 166th Committee on Photonic&Electronic Oxide, Japan Society for the promotion of Science(JSPS)-
dc.titleAnalysis on Structural, Electrical and Optical Properties of Pulsed Laser Deposited HfO_2 Films for Gate Dielectic Material of Transparent TFTs-
dc.typeConference-
dc.contributor.affiliatedAuthorMoon Byung-Moo-
dc.identifier.bibliographicCitation6th International Symposium on Transparent Oxide Thin films for Electronics and Optics (TOEO-6)-
dc.relation.isPartOf6th International Symposium on Transparent Oxide Thin films for Electronics and Optics (TOEO-6)-
dc.relation.isPartOfTransparent Oxide Thin films for Electronics and Optics (TOEO-6) proceeding vol.6-
dc.citation.title6th International Symposium on Transparent Oxide Thin films for Electronics and Optics (TOEO-6)-
dc.citation.conferencePlaceJA-
dc.citation.conferencePlaceTokyo Fashion Town(TFT) Building Ariake,Tokyo,Japan-
dc.citation.conferenceDate2009-04-15-
dc.type.rimsCONF-
dc.description.journalClass1-
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