Surface Acoustic Wave-Based Infrared Sensor With Aluminum Nitride Films Deposited
- Authors
- Lee, Jin-Woo; Lee, Byungmoon; Kim, Jong Woo; Ju, Byeong-Kwon
- Issue Date
- 15-11월-2020
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- Keywords
- Aluminum nitride; III-V semiconductor materials; Resonant frequency; Films; Frequency measurement; Infrared sensors; Aluminum nitride; infrared sensor; sensor packaging; proximity sensor; surface acoustic wave
- Citation
- IEEE SENSORS JOURNAL, v.20, no.22, pp.13277 - 13283
- Indexed
- SCIE
SCOPUS
- Journal Title
- IEEE SENSORS JOURNAL
- Volume
- 20
- Number
- 22
- Start Page
- 13277
- End Page
- 13283
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/51491
- DOI
- 10.1109/JSEN.2020.2992697
- ISSN
- 1530-437X
- Abstract
- This paper reports on a surface acoustic wave-based infrared sensor with an aluminum nitride thin film deposited on interdigital transducers. The result of the coupling-of-modes (COM) modeling provides an optimized 0.64 mm x 1.80 mm design for interdigital transducers. The sensor resonates at 251.35 MHz with an insertion loss (IL) of -11.80 dB, and the IL difference between the central peak and the second peak is 5.89 dB, which is sufficient for signal processing. The area ratio of the deposited photoelectric film on the device determines the characteristics of the frequency response of the sensor. The response to the intensity of infrared irradiation exhibits good linearity of 99.85% at a wavelength of 850 nm when the thickness and area ratio of the deposited aluminum nitride thin film is 50 nm and 75%, respectively. When the response cycles are observed against infrared light, the sensor not only reacts at high speeds but also returns to the initial state rapidly. The effects of location, including the distance and angle between the light source and the sensor, are also suitable for practical application.
- Files in This Item
- There are no files associated with this item.
- Appears in
Collections - College of Engineering > School of Electrical Engineering > 1. Journal Articles
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.