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Effect of Oxygen Ambient on Intrinsic Stress of ZnO Thin Films and Physical Properties for The Channel Layer of Transparent TFTs

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dc.contributor.authorMoon Byung-Moo-
dc.date.accessioned2021-08-30T08:55:38Z-
dc.date.available2021-08-30T08:55:38Z-
dc.date.created2021-04-22-
dc.date.issued2009-02-20-
dc.identifier.urihttps://scholar.korea.ac.kr/handle/2021.sw.korea/51722-
dc.publisher삼성전자(주)/한국반도체산업협회/한국반도체연구조합-
dc.titleEffect of Oxygen Ambient on Intrinsic Stress of ZnO Thin Films and Physical Properties for The Channel Layer of Transparent TFTs-
dc.typeConference-
dc.contributor.affiliatedAuthorMoon Byung-Moo-
dc.identifier.bibliographicCitation제16회 한국반도체학술대회-
dc.relation.isPartOf제16회 한국반도체학술대회-
dc.relation.isPartOf제16회 한국반도체학술대회-
dc.citation.title제16회 한국반도체학술대회-
dc.citation.conferencePlaceKO-
dc.citation.conferencePlace대전컴벤션센터(DCC)-
dc.citation.conferenceDate2009-02-18-
dc.type.rimsCONF-
dc.description.journalClass2-
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