Lead-Free Dual-Phase Halide Perovskites for Preconditioned Conducting-Bridge Memory
DC Field | Value | Language |
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dc.contributor.author | Han, Ji Su | - |
dc.contributor.author | Le, Quyet Van | - |
dc.contributor.author | Kim, Hyojung | - |
dc.contributor.author | Lee, Yoon Jung | - |
dc.contributor.author | Lee, Da Eun | - |
dc.contributor.author | Im, In Hyuk | - |
dc.contributor.author | Lee, Min Kyung | - |
dc.contributor.author | Kim, Seung Ju | - |
dc.contributor.author | Kim, Jaehyun | - |
dc.contributor.author | Kwak, Kyung Ju | - |
dc.contributor.author | Choi, Min-Ju | - |
dc.contributor.author | Lee, Sol A. | - |
dc.contributor.author | Hong, Kootak | - |
dc.contributor.author | Kim, Soo Young | - |
dc.contributor.author | Jang, Ho Won | - |
dc.date.accessioned | 2021-08-30T10:52:08Z | - |
dc.date.available | 2021-08-30T10:52:08Z | - |
dc.date.created | 2021-06-18 | - |
dc.date.issued | 2020-10-15 | - |
dc.identifier.issn | 1613-6810 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/52449 | - |
dc.description.abstract | Organometallic and all-inorganic halide perovskites (HPs) have recently emerged as promising candidate materials for resistive switching (RS) nonvolatile memory due to their current-voltage hysteresis caused by fast ion migration. Lead-free and all-inorganic HPs have been researched for non-toxic and environmentally friendly RS memory devices. However, only HP-based devices with electrochemically active top electrode (TE) exhibit ultra-low operating voltages and high on/off ratio RS properties. The active TE easily reacts to halide ions in HP films, and the devices have a low device durability. Herein, RS memory devices based on an air-stable lead-free all-inorganic dual-phase HP (AgBi2I7-Cs3Bi2I9) are successfully fabricated with inert metal electrodes. The devices with Au TE show filamentary RS behavior by conducting-bridge involving Ag cations in HPs with ultra-low operating voltages (<0.15 V), high on/off ratio (>10(7)), multilevel data storage, and long retention times (>5 x 10(4)s). The use of a closed-loop pulse switching method improves reversible RS properties up to 10(3)cycles with high on/off ratio above 10(6). With an extremely small bending radius of 1 mm, the devices are operable with reasonable RS characteristics. This work provides a promising material strategy for lead-free all-inorganic HP-based nonvolatile memory devices for practical applications. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | WILEY-V C H VERLAG GMBH | - |
dc.subject | RESISTIVE SWITCHING MEMORIES | - |
dc.subject | VOLTAGE | - |
dc.subject | MEMRISTOR | - |
dc.subject | ENDURANCE | - |
dc.subject | HFOX | - |
dc.title | Lead-Free Dual-Phase Halide Perovskites for Preconditioned Conducting-Bridge Memory | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Soo Young | - |
dc.identifier.doi | 10.1002/smll.202003225 | - |
dc.identifier.scopusid | 2-s2.0-85091048639 | - |
dc.identifier.wosid | 000570212000001 | - |
dc.identifier.bibliographicCitation | SMALL, v.16, no.41 | - |
dc.relation.isPartOf | SMALL | - |
dc.citation.title | SMALL | - |
dc.citation.volume | 16 | - |
dc.citation.number | 41 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Physical | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.subject.keywordPlus | RESISTIVE SWITCHING MEMORIES | - |
dc.subject.keywordPlus | VOLTAGE | - |
dc.subject.keywordPlus | MEMRISTOR | - |
dc.subject.keywordPlus | ENDURANCE | - |
dc.subject.keywordPlus | HFOX | - |
dc.subject.keywordAuthor | all-inorganic halide perovskites | - |
dc.subject.keywordAuthor | closed-loop pulse switching | - |
dc.subject.keywordAuthor | conducting-bridge | - |
dc.subject.keywordAuthor | lead-free halide perovskites | - |
dc.subject.keywordAuthor | resistive switching memory | - |
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