Reduction of random telegraph noise by high-pressure deuterium annealing for p-type omega-gate nanowire FET
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Yang, Geunsoo | - |
dc.contributor.author | Kim, Donghyun | - |
dc.contributor.author | Yang, Ji Woon | - |
dc.contributor.author | Barraud, Sylvain | - |
dc.contributor.author | Brevard, Laurent | - |
dc.contributor.author | Ghibaudo, Gerard | - |
dc.contributor.author | Lee, Jae Woo | - |
dc.date.accessioned | 2021-08-30T11:13:56Z | - |
dc.date.available | 2021-08-30T11:13:56Z | - |
dc.date.created | 2021-06-18 | - |
dc.date.issued | 2020-10-09 | - |
dc.identifier.issn | 0957-4484 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/52475 | - |
dc.description.abstract | In this work, we studied the effect of high-pressure deuterium annealing (HPDA) on a p-type omega-gate nanowire field effect transistor by random telegraph noise (RTN) signal analysis. After HPDA under conditions of 400 degrees C and 10 atm for 30 min, I(OFF)decreases by 41.2% and I(ON)increases by up to 5.4%. Also, subthreshold swing (SS) is reduced from 72 mV dec(-1)to 70 mV dec(-1). In RTN analysis, multi-level RTN is reduced to single-level RTN due to the passivation of a fast trap site by HPDA. Delta I-D/I(D)is also decreased 1.3 and 1.1 times at |V-OV| = 0.2 V and 0.4 V, respectively. From the low-frequency noise analysis, the reduction of trap density is observed by 86% at |V-OV| = 0.4 V after HPDA. Through these results, we found that the HPDA reduces traps of gate dielectric and improves the quality of the interface between gate dielectric and NW channel in p-type OGNW FET. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | IOP PUBLISHING LTD | - |
dc.subject | LOW-FREQUENCY NOISE | - |
dc.subject | HOT-CARRIER | - |
dc.subject | SIGNAL-NOISE | - |
dc.subject | FIELD | - |
dc.subject | OXIDE | - |
dc.subject | HYDROGEN | - |
dc.subject | PERFORMANCE | - |
dc.subject | TRANSISTORS | - |
dc.subject | INTERFACE | - |
dc.subject | MOSFETS | - |
dc.title | Reduction of random telegraph noise by high-pressure deuterium annealing for p-type omega-gate nanowire FET | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Yang, Ji Woon | - |
dc.contributor.affiliatedAuthor | Lee, Jae Woo | - |
dc.identifier.doi | 10.1088/1361-6528/ab9e90 | - |
dc.identifier.scopusid | 2-s2.0-85088678440 | - |
dc.identifier.wosid | 000555595800001 | - |
dc.identifier.bibliographicCitation | NANOTECHNOLOGY, v.31, no.41 | - |
dc.relation.isPartOf | NANOTECHNOLOGY | - |
dc.citation.title | NANOTECHNOLOGY | - |
dc.citation.volume | 31 | - |
dc.citation.number | 41 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | LOW-FREQUENCY NOISE | - |
dc.subject.keywordPlus | HOT-CARRIER | - |
dc.subject.keywordPlus | SIGNAL-NOISE | - |
dc.subject.keywordPlus | FIELD | - |
dc.subject.keywordPlus | OXIDE | - |
dc.subject.keywordPlus | HYDROGEN | - |
dc.subject.keywordPlus | PERFORMANCE | - |
dc.subject.keywordPlus | TRANSISTORS | - |
dc.subject.keywordPlus | INTERFACE | - |
dc.subject.keywordPlus | MOSFETS | - |
dc.subject.keywordAuthor | omega-gate nanowire field effect transistor | - |
dc.subject.keywordAuthor | high-pressure deuterium annealing | - |
dc.subject.keywordAuthor | multi-level random telegraph noise | - |
dc.subject.keywordAuthor | low-frequency noise | - |
dc.subject.keywordAuthor | trap analysis | - |
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