Damage-Free Plasma Etching to Enhance Performance of AlGaInP-Based Micro-Light Emitting Diode
DC Field | Value | Language |
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dc.contributor.author | Lee, Sang-Youl | - |
dc.contributor.author | Lee, Eunduk | - |
dc.contributor.author | Moon, Ji-Hyung | - |
dc.contributor.author | Choi, Byoungjun | - |
dc.contributor.author | Oh, Jeong-Tak | - |
dc.contributor.author | Jeong, Hwan-Hee | - |
dc.contributor.author | Seong, Tae-Yeon | - |
dc.contributor.author | Amano, Hiroshi | - |
dc.date.accessioned | 2021-08-30T15:12:18Z | - |
dc.date.available | 2021-08-30T15:12:18Z | - |
dc.date.created | 2021-06-18 | - |
dc.date.issued | 2020-09 | - |
dc.identifier.issn | 1041-1135 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/53275 | - |
dc.description.abstract | We investigated the effect of plasma-etching on the electrical and optical performance of lateral AlGaInP-based red micro-LEDs as a function of etching time, where plasma-etched Ag particles were used as masks. For the sample etched for 12 s, around 33% of the sample surface were randomly etched, whereas for the sample etched for 24 s, nearly 60% were randomly etched with additional nanoscale hillocks. Regardless of etching times, all samples exhibited similar forward voltages of 1.944-1.929 V at 20 mu A and reverse leakage currents of 1 x 10(-8) A at -10 V. The micro-LEDs fabricated with 12 s-etched and 24 s-etched p-GaP gave 26.2% and 42.3% higher light output powers at 20 mu A, respectively, than the one with unetched p-GaP. The S parameter decreased with increasing forward current and etching time. The electroluminescence (EL) peak intensities of the micro-LEDs were consistent with their light output performance and included shoulder peaks at 612 nm. Emission images showed that the micro-LEDs with the 24 s-etched p-GaP revealed the most intense and uniform emission area among the three samples. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.subject | INTERNAL QUANTUM EFFICIENCY | - |
dc.subject | EXTRACTION | - |
dc.subject | LEDS | - |
dc.title | Damage-Free Plasma Etching to Enhance Performance of AlGaInP-Based Micro-Light Emitting Diode | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Seong, Tae-Yeon | - |
dc.identifier.doi | 10.1109/LPT.2020.3010820 | - |
dc.identifier.scopusid | 2-s2.0-85089598397 | - |
dc.identifier.wosid | 000554881500002 | - |
dc.identifier.bibliographicCitation | IEEE PHOTONICS TECHNOLOGY LETTERS, v.32, no.17, pp.1041 - 1044 | - |
dc.relation.isPartOf | IEEE PHOTONICS TECHNOLOGY LETTERS | - |
dc.citation.title | IEEE PHOTONICS TECHNOLOGY LETTERS | - |
dc.citation.volume | 32 | - |
dc.citation.number | 17 | - |
dc.citation.startPage | 1041 | - |
dc.citation.endPage | 1044 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Optics | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Optics | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | INTERNAL QUANTUM EFFICIENCY | - |
dc.subject.keywordPlus | EXTRACTION | - |
dc.subject.keywordPlus | LEDS | - |
dc.subject.keywordAuthor | Micro-light emitting diode | - |
dc.subject.keywordAuthor | AlGaInP | - |
dc.subject.keywordAuthor | plasma-etching | - |
dc.subject.keywordAuthor | Ag particle | - |
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