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트렌치 게이트 하단의 산화막 확장을 통한 트렌치IGBT의 항복전압 향상에 대한연구
Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Sung, Man Young | - |
| dc.date.accessioned | 2021-08-30T15:29:49Z | - |
| dc.date.available | 2021-08-30T15:29:49Z | - |
| dc.date.created | 2021-04-22 | - |
| dc.date.issued | 2008-11-07 | - |
| dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/53529 | - |
| dc.publisher | 한국전기전자재료학회(KIEEME) | - |
| dc.subject | TIGBT, Breakdown Voltage | - |
| dc.title | 트렌치 게이트 하단의 산화막 확장을 통한 트렌치IGBT의 항복전압 향상에 대한연구 | - |
| dc.title.alternative | A Study on Breakdown Voltage Improvement of the Trench IGBT by Extending a Gate Oxide Region Beneath the Trench Gate | - |
| dc.type | Conference | - |
| dc.contributor.affiliatedAuthor | Sung, Man Young | - |
| dc.identifier.bibliographicCitation | 2008 한국전기전자재료학회 추계학술대회, pp.74 - 75 | - |
| dc.relation.isPartOf | 2008 한국전기전자재료학회 추계학술대회 | - |
| dc.relation.isPartOf | Proceedings of the KIEEME Annual Autumn Conference 2008 | - |
| dc.citation.title | 2008 한국전기전자재료학회 추계학술대회 | - |
| dc.citation.startPage | 74 | - |
| dc.citation.endPage | 75 | - |
| dc.citation.conferencePlace | KO | - |
| dc.citation.conferencePlace | KIST 국제협력관, 서울 | - |
| dc.citation.conferenceDate | 2008-11-06 | - |
| dc.type.rims | CONF | - |
| dc.description.journalClass | 2 | - |
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