The electrical properties of Low-k SiOC(-H) deposited by PECVD with different annealing time
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lim, Dae-Soon | - |
dc.date.accessioned | 2021-08-30T18:25:56Z | - |
dc.date.available | 2021-08-30T18:25:56Z | - |
dc.date.created | 2021-04-22 | - |
dc.date.issued | 2008-10-24 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/54157 | - |
dc.publisher | 한국세라믹학회 | - |
dc.subject | dielectric, Low-k, PECVD, SiOC(-H) | - |
dc.title | The electrical properties of Low-k SiOC(-H) deposited by PECVD with different annealing time | - |
dc.type | Conference | - |
dc.contributor.affiliatedAuthor | Lim, Dae-Soon | - |
dc.identifier.bibliographicCitation | 2008 추계세라믹학회 | - |
dc.relation.isPartOf | 2008 추계세라믹학회 | - |
dc.citation.title | 2008 추계세라믹학회 | - |
dc.citation.conferencePlace | KO | - |
dc.citation.conferencePlace | 대한민국(수원) | - |
dc.citation.conferenceDate | 2008-10-24 | - |
dc.type.rims | CONF | - |
dc.description.journalClass | 2 | - |
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