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Enhancement of perpendicular magnetic anisotropy and Dzyaloshinskii-Moriya interaction in thin ferromagnetic films by atomic-scale modulation of interfaces

Authors
Samardak, A. S.Davydenko, A., VKolesnikov, A. G.Samardak, A. YuKozlov, A. G.Pal, BappadityaOgnev, A., VSadovnikov, A., VNikitov, S. A.Gerasimenko, A., VCha, In HoKim, Yong JinKim, Gyu WonTretiakov, Oleg A.Kim, Young Keun
Issue Date
17-7월-2020
Publisher
NATURE PUBLISHING GROUP
Citation
NPG ASIA MATERIALS, v.12, no.1
Indexed
SCIE
SCOPUS
Journal Title
NPG ASIA MATERIALS
Volume
12
Number
1
URI
https://scholar.korea.ac.kr/handle/2021.sw.korea/54377
DOI
10.1038/s41427-020-0232-9
ISSN
1884-4049
Abstract
To stabilize nontrivial spin textures, e.g., skyrmions or chiral domain walls in ultrathin magnetic films, an additional degree of freedom, such as the interfacial Dzyaloshinskii-Moriya interaction (IDMI), must be induced by the strong spin-orbit coupling (SOC) of a stacked heavy metal layer. However, advanced approaches to simultaneously control the IDMI and perpendicular magnetic anisotropy (PMA) are needed for future spin-orbitronic device implementations. Here, we show the effect of atomic-scale surface modulation on the magnetic properties and IDMI in ultrathin films composed of5dheavy metal/ferromagnet/4d(5d)heavy metal or oxide interfaces, such as Pt/CoFeSiB/Ru, Pt/CoFeSiB/Ta, and Pt/CoFeSiB/MgO. The maximum IDMI value corresponds to the correlated roughness of the bottom and top interfaces of the ferromagnetic layer. The proposed approach for significant enhancement of PMA and the IDMI through interface roughness engineering at the atomic scale offers a powerful tool for the development of spin-orbitronic devices with precise and reliable controllability of their functionality.
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공과대학 (신소재공학부)
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