Programmable Synapse-Like MoS2 Field-Effect Transistors Phase-Engineered by Dynamic Lithium Ion Modulation
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Park, Hyunik | - |
dc.contributor.author | Kim, Jihyun | - |
dc.date.accessioned | 2021-08-31T01:07:08Z | - |
dc.date.available | 2021-08-31T01:07:08Z | - |
dc.date.created | 2021-06-19 | - |
dc.date.issued | 2020-05 | - |
dc.identifier.issn | 2199-160X | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/56090 | - |
dc.description.abstract | Synaptic transistors, inspired by brain plasticity, have shown strong potential as neuromorphic computing elements. Employing 2D materials for synaptic devices can provide an additional degree-of-freedom for monolithically integrated circuits owing to their atomically thin body and suitable electrical properties. Herein, a programmable molybdenum disulfide (MoS2) field-effect transistor (FET) that emulates synaptic interaction via phase engineering, which is assisted by field-driven ionic modulation, is reported. Li+ ions selectively introduced into the van der Waals gap of the multilayer MoS2 convert the 2H phase (semiconducting) into the 1T' phase (metallic), resulting in a seamless and reversible 1T'/2H heterophase homojunction device. The 1T'-MoS2 region exhibits dynamic resistive switching behavior in a non-volatile fashion with a switching ratio of approximate to 10 owing to the Li+ ion redistribution under the applied electric field. By controlling the Schottky barrier height of the 1T'-MoS2 channel, the behaviors of the monolithically integrated 1T'/2H-MoS2 FET can be programmed with non-volatility. The 1T'/2H-MoS2 heterophase homojunction device shows multilevel current output with a multistate computing window, indicating its potential as a stable multilevel neuro synaptic device. These results could enable the development of highly functional and energy-efficient neuromorphic systems via the monolithic integration of 2D materials. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | WILEY | - |
dc.subject | EVOLUTION | - |
dc.subject | MEMORY | - |
dc.subject | CONTACTS | - |
dc.subject | 1T-MOS2 | - |
dc.subject | NEURONS | - |
dc.title | Programmable Synapse-Like MoS2 Field-Effect Transistors Phase-Engineered by Dynamic Lithium Ion Modulation | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Jihyun | - |
dc.identifier.doi | 10.1002/aelm.201901410 | - |
dc.identifier.scopusid | 2-s2.0-85083060412 | - |
dc.identifier.wosid | 000533986800005 | - |
dc.identifier.bibliographicCitation | ADVANCED ELECTRONIC MATERIALS, v.6, no.5 | - |
dc.relation.isPartOf | ADVANCED ELECTRONIC MATERIALS | - |
dc.citation.title | ADVANCED ELECTRONIC MATERIALS | - |
dc.citation.volume | 6 | - |
dc.citation.number | 5 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | EVOLUTION | - |
dc.subject.keywordPlus | MEMORY | - |
dc.subject.keywordPlus | CONTACTS | - |
dc.subject.keywordPlus | 1T-MOS2 | - |
dc.subject.keywordPlus | NEURONS | - |
dc.subject.keywordAuthor | 2D materials | - |
dc.subject.keywordAuthor | field-effect transistors | - |
dc.subject.keywordAuthor | ion intercalation | - |
dc.subject.keywordAuthor | phase engineering | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
(02841) 서울특별시 성북구 안암로 14502-3290-1114
COPYRIGHT © 2021 Korea University. All Rights Reserved.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.