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Characteristic Enhancement of Trench IGBT by Deep P+ Layer beneath the Trench Emitter Ion Implantation
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Sung, Man Young | - |
| dc.date.accessioned | 2021-08-31T02:31:09Z | - |
| dc.date.available | 2021-08-31T02:31:09Z | - |
| dc.date.created | 2021-04-22 | - |
| dc.date.issued | 2008-07-08 | - |
| dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/56472 | - |
| dc.publisher | IEICE | - |
| dc.subject | IGBT, Trench, Deep P+ Layer | - |
| dc.title | Characteristic Enhancement of Trench IGBT by Deep P+ Layer beneath the Trench Emitter Ion Implantation | - |
| dc.type | Conference | - |
| dc.contributor.affiliatedAuthor | Sung, Man Young | - |
| dc.identifier.bibliographicCitation | ITC-CSCC 2008( The 23rd International Technical Conference on Circuits/Systems, Computers and Communications), pp.1665 - 1668 | - |
| dc.relation.isPartOf | ITC-CSCC 2008( The 23rd International Technical Conference on Circuits/Systems, Computers and Communications) | - |
| dc.relation.isPartOf | Proceedings of ITC-CSCC 2008( The 23rd International Technical Conference on Circuits/Systems, Compu | - |
| dc.citation.title | ITC-CSCC 2008( The 23rd International Technical Conference on Circuits/Systems, Computers and Communications) | - |
| dc.citation.startPage | 1665 | - |
| dc.citation.endPage | 1668 | - |
| dc.citation.conferencePlace | JA | - |
| dc.citation.conferenceDate | 2008-07-06 | - |
| dc.type.rims | CONF | - |
| dc.description.journalClass | 1 | - |
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Collections - College of Engineering > School of Electrical Engineering > 2. Conference Papers
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