Selective electrochemical etching of epitaxial aluminum nitride thin film
DC Field | Value | Language |
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dc.contributor.author | Choi, Yongha | - |
dc.contributor.author | Choi, Rakjun | - |
dc.contributor.author | Kim, Jihyun | - |
dc.date.accessioned | 2021-08-31T02:47:09Z | - |
dc.date.available | 2021-08-31T02:47:09Z | - |
dc.date.created | 2021-06-18 | - |
dc.date.issued | 2020-04-15 | - |
dc.identifier.issn | 0169-4332 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/56609 | - |
dc.description.abstract | Aluminum nitride (AlN) has an ultra-wide bandgap energy of 6.2 eV and is resistant to chemical etching owing to its high chemical stability, making it intractable in the device fabrication process. We developed a facile method of electrochemical (EC) etching of a high-quality AlN epitaxial layer, where both spatial selectivity and a controllable etch rate were achieved. Underneath porous metal electrodes, the lateral etch rate increased with the increasing external anodic bias, from 400 nm/min at 5 V to 700 nm/min at 15 V. Nonporous metal electrodes protected the AlN from etching in hot H3PO4, enabling the spatial selectivity. The high EC etch rate is attributed to the enhanced hole-assisted oxidation at the interface between the AlN and the etchant. The etch pit formed by EC etching exhibited an inverse hexagonal pyramid structure with {1 0 -1 - 1} face. As an alternative to dry etching, our method can be applied to the low-damage patterning of AlN with a controllable etch rate. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | ELSEVIER | - |
dc.subject | ALN | - |
dc.subject | GAN | - |
dc.title | Selective electrochemical etching of epitaxial aluminum nitride thin film | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Jihyun | - |
dc.identifier.doi | 10.1016/j.apsusc.2020.145279 | - |
dc.identifier.scopusid | 2-s2.0-85078178691 | - |
dc.identifier.wosid | 000514827600121 | - |
dc.identifier.bibliographicCitation | APPLIED SURFACE SCIENCE, v.509 | - |
dc.relation.isPartOf | APPLIED SURFACE SCIENCE | - |
dc.citation.title | APPLIED SURFACE SCIENCE | - |
dc.citation.volume | 509 | - |
dc.type.rims | ART | - |
dc.type.docType | Article; Proceedings Paper | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Physical | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Coatings & Films | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.subject.keywordPlus | ALN | - |
dc.subject.keywordPlus | GAN | - |
dc.subject.keywordAuthor | Aluminum nitride | - |
dc.subject.keywordAuthor | Electrochemical etching | - |
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