Improved Light Output of AlGaInP-Based Micro-Light Emitting Diode Using Distributed Bragg Reflector
DC Field | Value | Language |
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dc.contributor.author | Lee, Sang-Youl | - |
dc.contributor.author | Moon, Ji Hyung | - |
dc.contributor.author | Moon, Yong-Tae | - |
dc.contributor.author | Kim, Chung Song | - |
dc.contributor.author | Park, Sunwoo | - |
dc.contributor.author | Oh, Jeong-Tak | - |
dc.contributor.author | Jeong, Hwan-Hee | - |
dc.contributor.author | Seong, Tae-Yeon | - |
dc.contributor.author | Amano, Hiroshi | - |
dc.date.accessioned | 2021-08-31T04:36:17Z | - |
dc.date.available | 2021-08-31T04:36:17Z | - |
dc.date.created | 2021-06-19 | - |
dc.date.issued | 2020-04-01 | - |
dc.identifier.issn | 1041-1135 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/56686 | - |
dc.description.abstract | We investigated how the performance and reliability of AlGaInP-based red (620 nm) micro-light-emitting diodes (micro-LEDs) (25 x 17 mu m(2)) were influenced by the use of n-AlInP ohmic layer and distributed Bragg reflector (DBR). The AlGaAs-based DBR showed reflectivity of 94.9% at 622 nm with a 14 nm-stopband width. The micro-LEDs with n-GaAs gave slightly lower forward voltages by 0.013 - 0.021 V than those with n-Al0.5In0.5P/n-Al0.6Ga0.4As and n-A(l0.5)In(0.5)P/DBR. However, the micro-LEDs with n-Al0.5In0.5P/n-Al0.6Ga0.4As and n-Al0.5In0.5P/DBR gave 61% and 125% higher light output power at 20 mu A compared with that with n-GaAs. It was shown that after annealing at 120 degrees C for 2,000 h, the forward voltage and the light output power at 4.7 A/cm(2) of the micro-LEDs with n-Al0.5In0.5P/DBR were degraded by 0.09% and 6.33%, respectively, with reference to those before annealing. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.subject | OHMIC CONTACTS | - |
dc.subject | EFFICIENCY | - |
dc.subject | PERFORMANCE | - |
dc.subject | PROBES | - |
dc.subject | GAAS | - |
dc.title | Improved Light Output of AlGaInP-Based Micro-Light Emitting Diode Using Distributed Bragg Reflector | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Seong, Tae-Yeon | - |
dc.identifier.doi | 10.1109/LPT.2020.2977376 | - |
dc.identifier.scopusid | 2-s2.0-85082018368 | - |
dc.identifier.wosid | 000521297100011 | - |
dc.identifier.bibliographicCitation | IEEE PHOTONICS TECHNOLOGY LETTERS, v.32, no.7, pp.438 - 441 | - |
dc.relation.isPartOf | IEEE PHOTONICS TECHNOLOGY LETTERS | - |
dc.citation.title | IEEE PHOTONICS TECHNOLOGY LETTERS | - |
dc.citation.volume | 32 | - |
dc.citation.number | 7 | - |
dc.citation.startPage | 438 | - |
dc.citation.endPage | 441 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Optics | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Optics | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | OHMIC CONTACTS | - |
dc.subject.keywordPlus | EFFICIENCY | - |
dc.subject.keywordPlus | PERFORMANCE | - |
dc.subject.keywordPlus | PROBES | - |
dc.subject.keywordPlus | GAAS | - |
dc.subject.keywordAuthor | Micro-light emitting diode | - |
dc.subject.keywordAuthor | AlGaInP | - |
dc.subject.keywordAuthor | distributed bragg reflector | - |
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