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2D semiconducting materials for electronic and optoelectronic applications: potential and challenge

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dc.contributor.authorKang, Sojung-
dc.contributor.authorLee, Donghun-
dc.contributor.authorKim, Jonghun-
dc.contributor.authorCapasso, Andrea-
dc.contributor.authorKang, Hee Seong-
dc.contributor.authorPark, Jin-Woo-
dc.contributor.authorLee, Chul-Ho-
dc.contributor.authorLee, Gwan-Hyoung-
dc.date.accessioned2021-08-31T04:51:43Z-
dc.date.available2021-08-31T04:51:43Z-
dc.date.created2021-06-18-
dc.date.issued2020-04-
dc.identifier.issn2053-1583-
dc.identifier.urihttps://scholar.korea.ac.kr/handle/2021.sw.korea/56803-
dc.description.abstractTwo-dimensional (2D) semiconductors hold promises for electronic and optoelectronic applications due to their outstanding electrical and optical properties. Despite a short research history, a wide range of 'proof-of-concept' devices based on 2D materials have been demonstrated, highlighting their impact in advanced technology. Here we review the unique properties 2D semiconducting materials and their applications in terms of electronic and optoelectronic devices. We summarize all the engineering issues in 2D devices, including material quality, dielectric, and contacts. We also discuss recent advances of 2D semiconductor devices in electronic and optoelectronic applications. This review would help to understand superior performance and multifunctions of 2D semiconductor devices and guide us toward new device applications of 2D semiconductors.-
dc.languageEnglish-
dc.language.isoen-
dc.publisherIOP PUBLISHING LTD-
dc.subjectFIELD-EFFECT TRANSISTORS-
dc.subjectDER-WAALS HETEROSTRUCTURE-
dc.subjectHEXAGONAL BORON-NITRIDE-
dc.subjectLIGHT-EMITTING-DIODES-
dc.subjectBLACK PHOSPHORUS-
dc.subject2-DIMENSIONAL MATERIALS-
dc.subjectMETAL DICHALCOGENIDE-
dc.subjectMOLYBDENUM-DISULFIDE-
dc.subjectGRAIN-BOUNDARIES-
dc.subjectMOS2 TRANSISTORS-
dc.title2D semiconducting materials for electronic and optoelectronic applications: potential and challenge-
dc.typeArticle-
dc.contributor.affiliatedAuthorLee, Donghun-
dc.contributor.affiliatedAuthorLee, Chul-Ho-
dc.identifier.doi10.1088/2053-1583/ab6267-
dc.identifier.scopusid2-s2.0-85082526382-
dc.identifier.wosid000526435400001-
dc.identifier.bibliographicCitation2D MATERIALS, v.7, no.2-
dc.relation.isPartOf2D MATERIALS-
dc.citation.title2D MATERIALS-
dc.citation.volume7-
dc.citation.number2-
dc.type.rimsART-
dc.type.docTypeReview-
dc.description.journalClass1-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaMaterials Science-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.subject.keywordPlusFIELD-EFFECT TRANSISTORS-
dc.subject.keywordPlusDER-WAALS HETEROSTRUCTURE-
dc.subject.keywordPlusHEXAGONAL BORON-NITRIDE-
dc.subject.keywordPlusLIGHT-EMITTING-DIODES-
dc.subject.keywordPlusBLACK PHOSPHORUS-
dc.subject.keywordPlus2-DIMENSIONAL MATERIALS-
dc.subject.keywordPlusMETAL DICHALCOGENIDE-
dc.subject.keywordPlusMOLYBDENUM-DISULFIDE-
dc.subject.keywordPlusGRAIN-BOUNDARIES-
dc.subject.keywordPlusMOS2 TRANSISTORS-
dc.subject.keywordAuthortransition metal dichalcogenides-
dc.subject.keywordAuthorvan der Waals heterostructure-
dc.subject.keywordAuthortransistor-
dc.subject.keywordAuthoroptoelectronic device-
dc.subject.keywordAuthorcontact-
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