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Use of the P-Floating Shielding Layer for Improving Electric Field Concentration of the Recessed Gate
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Sung, Man Young | - |
| dc.date.accessioned | 2021-08-31T05:48:22Z | - |
| dc.date.available | 2021-08-31T05:48:22Z | - |
| dc.date.created | 2021-04-22 | - |
| dc.date.issued | 2008-06-03 | - |
| dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/57145 | - |
| dc.publisher | IEEE | - |
| dc.subject | Recessed Gate, IGBT, Shielding Layer P-Floating | - |
| dc.title | Use of the P-Floating Shielding Layer for Improving Electric Field Concentration of the Recessed Gate | - |
| dc.type | Conference | - |
| dc.contributor.affiliatedAuthor | Sung, Man Young | - |
| dc.identifier.bibliographicCitation | 2008 IEEE International Conference on Integrated Circuit Design and Technology(ICICDT), pp.13 - 16 | - |
| dc.relation.isPartOf | 2008 IEEE International Conference on Integrated Circuit Design and Technology(ICICDT) | - |
| dc.relation.isPartOf | Proceedings of 2008 IEEE International Conference on Integrated Circuit Design and Technology(ICICDT | - |
| dc.citation.title | 2008 IEEE International Conference on Integrated Circuit Design and Technology(ICICDT) | - |
| dc.citation.startPage | 13 | - |
| dc.citation.endPage | 16 | - |
| dc.citation.conferencePlace | FR | - |
| dc.citation.conferencePlace | Minatec Grenoble, France | - |
| dc.citation.conferenceDate | 2008-06-02 | - |
| dc.type.rims | CONF | - |
| dc.description.journalClass | 1 | - |
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