Alpha Particle Irradiation of High Aluminum Content AlGan Polarization Doped Field Effect Transistors
DC Field | Value | Language |
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dc.contributor.author | Carey, Patrick H. | - |
dc.contributor.author | Ren, Fan | - |
dc.contributor.author | Bae, Jinho | - |
dc.contributor.author | Kim, Jihyun | - |
dc.contributor.author | Pearton, Stephen J. | - |
dc.date.accessioned | 2021-08-31T06:32:57Z | - |
dc.date.available | 2021-08-31T06:32:57Z | - |
dc.date.created | 2021-06-18 | - |
dc.date.issued | 2020-03-13 | - |
dc.identifier.issn | 2162-8769 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/57292 | - |
dc.description.abstract | Alpha particle irradiation at 18 MeV was performed on high aluminum content AlGaN Polarization Doped Field Effect Transistors (POLFTs) and characterized by DC and switching measurements. The POLFETs underwent a reduction in DC saturation current of 23% and 33% at fluences of 1 x 10(13) cm(-2) and 3 x 10(13) cm(-2), respectively. Carrier removal rates in the range of 2520 cm(-1) and 7100 cm(-1) were observed, which are similar to previously reported values for GaN HEMTs. The POLFETs under 100 kHz gate lag measurement demonstrated zero degradation while compared to a traditional GaN HEMT device which suffered serious current collapse as a result of formation of a virtual gate from radiation-induced defects. (C) 2020 The Electrochemical Society ("ECS"). Published on behalf of ECS by IOP Publishing Limited. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | ELECTROCHEMICAL SOC INC | - |
dc.subject | RADIATION | - |
dc.subject | DISPLACEMENT | - |
dc.title | Alpha Particle Irradiation of High Aluminum Content AlGan Polarization Doped Field Effect Transistors | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Jihyun | - |
dc.identifier.doi | 10.1149/2162-8777/ab8019 | - |
dc.identifier.scopusid | 2-s2.0-85084928972 | - |
dc.identifier.wosid | 000522557700001 | - |
dc.identifier.bibliographicCitation | ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, v.9, no.3 | - |
dc.relation.isPartOf | ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY | - |
dc.citation.title | ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY | - |
dc.citation.volume | 9 | - |
dc.citation.number | 3 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | RADIATION | - |
dc.subject.keywordPlus | DISPLACEMENT | - |
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