Dual-field plated beta-Ga2O3 nano-FETs with an off-state breakdown voltage exceeding 400 V
DC Field | Value | Language |
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dc.contributor.author | Bae, Jinho | - |
dc.contributor.author | Kim, Hyoung Woo | - |
dc.contributor.author | Kang, In Ho | - |
dc.contributor.author | Kim, Jihyun | - |
dc.date.accessioned | 2021-08-31T09:35:30Z | - |
dc.date.available | 2021-08-31T09:35:30Z | - |
dc.date.created | 2021-06-18 | - |
dc.date.issued | 2020-02-28 | - |
dc.identifier.issn | 2050-7526 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/57600 | - |
dc.description.abstract | The nature of ultra-wide energy bandgap (UWBG) semiconductors enables transistors to withstand large voltage swings, ensuring stable high-power and high-efficiency operation. The potential of UWBG beta-Ga2O3 nano-field effect transistors (nano-FETs) has not been fully explored due to premature avalanche breakdown in these devices, despite their extremely high critical breakdown field. An exfoliated beta-Ga2O3 nano-layer was fabricated into a depletion-mode nano-FET integrated with dual field-modulating layers to redistribute the electric field crowded around the drain edge of the gate electrode. A stepped-gate field-plate and a source-grounded field-modulating electrode were integrated into the planar beta-Ga2O3 nano-FETs. Excellent output and transfer characteristics were demonstrated, i.e. a low subthreshold swing (95.0 mV dec(-1)) and high on/off ratio (B1010), achieving an ultra-high off-state three-terminal breakdown voltage of 412 V. The experimental results were compared with numerical simulations, confirming the efficacy of the dual-field plate structure. The introduction of multiple field-modulating plates into the UWBG beta-Ga2O3 nano-FETs greatly increased the voltage swings to over 400 V, suggesting the possibility for small footprint power electronics. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | ROYAL SOC CHEMISTRY | - |
dc.subject | ALGAN/GAN HEMTS | - |
dc.subject | POWER | - |
dc.title | Dual-field plated beta-Ga2O3 nano-FETs with an off-state breakdown voltage exceeding 400 V | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Jihyun | - |
dc.identifier.doi | 10.1039/c9tc05161a | - |
dc.identifier.scopusid | 2-s2.0-85080930938 | - |
dc.identifier.wosid | 000518640600035 | - |
dc.identifier.bibliographicCitation | JOURNAL OF MATERIALS CHEMISTRY C, v.8, no.8, pp.2687 - 2692 | - |
dc.relation.isPartOf | JOURNAL OF MATERIALS CHEMISTRY C | - |
dc.citation.title | JOURNAL OF MATERIALS CHEMISTRY C | - |
dc.citation.volume | 8 | - |
dc.citation.number | 8 | - |
dc.citation.startPage | 2687 | - |
dc.citation.endPage | 2692 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | ALGAN/GAN HEMTS | - |
dc.subject.keywordPlus | POWER | - |
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