Using SiO2-Based Distributed Bragg Reflector to Improve the Performance of AlGaInP-Based Red Micro-Light Emitting Diode
DC Field | Value | Language |
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dc.contributor.author | Lee, Sang-Youl | - |
dc.contributor.author | Moon, Ji Hyung | - |
dc.contributor.author | Moon, Yong-Tae | - |
dc.contributor.author | Choi, Byoungjun | - |
dc.contributor.author | Oh, Jeong-Tak | - |
dc.contributor.author | Jeong, Hwan-Hee | - |
dc.contributor.author | Seong, Tae-Yeon | - |
dc.contributor.author | Amano, Hiroshi | - |
dc.date.accessioned | 2021-08-31T09:44:51Z | - |
dc.date.available | 2021-08-31T09:44:51Z | - |
dc.date.created | 2021-06-18 | - |
dc.date.issued | 2020-02-19 | - |
dc.identifier.issn | 2162-8769 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/57620 | - |
dc.description.abstract | We have investigated how different types of the reflectors affected the optical and electrical performance of AlGaInP-based microLEDs. Simulations showed that the AlGaAs-based epitaxial distributed Bragg reflector (DBR) had a stopband at the 610-624 nm region with reflectivity of 90%, the SiO2/TiO2 dielectric DBR gave a stopband at the 580-770 nm range with a maximum reflectivity of 99%, and the ITO/Ag metal reflector exhibited reflectivity of 90% across the 400-800 nm region. All micro-LEDs gave forward voltages of 1.895-1.960 V at 20 mu A. The micro-LEDs with the dielectric DBR and metal reflector yielded 31% and 13% higher light output at 20 mu A than that with the epitaxial DBR, respectively. All of the micro-LEDs contained a shoulder peak at approximately 615 nm in their electroluminescence spectra. Ray-tracing simulations exhibited that the micro-LEDs with the dielectric DBR and metal reflector produced 26% and 22% higher total light output power than the one with the epitaxial DBR, respectively. It was also shown that for the micro-LEDs with the metal reflector, some of the micro-LEDs were detached from the metal reflectors due to the interfacial voids induced as a result of agglomeration of Ag layer during fabrication process. (C) 2020 The Electrochemical Society ("ECS"). Published on behalf of ECS by IOP Publishing Limited. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | ELECTROCHEMICAL SOC INC | - |
dc.subject | GAN | - |
dc.subject | EFFICIENCY | - |
dc.subject | POWER | - |
dc.subject | LEDS | - |
dc.subject | PROBES | - |
dc.subject | GAAS | - |
dc.subject | ALAS | - |
dc.title | Using SiO2-Based Distributed Bragg Reflector to Improve the Performance of AlGaInP-Based Red Micro-Light Emitting Diode | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Seong, Tae-Yeon | - |
dc.identifier.doi | 10.1149/2162-8777/ab74c3 | - |
dc.identifier.scopusid | 2-s2.0-85081734727 | - |
dc.identifier.wosid | 000537396700001 | - |
dc.identifier.bibliographicCitation | ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, v.9, no.3 | - |
dc.relation.isPartOf | ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY | - |
dc.citation.title | ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY | - |
dc.citation.volume | 9 | - |
dc.citation.number | 3 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | GAN | - |
dc.subject.keywordPlus | EFFICIENCY | - |
dc.subject.keywordPlus | POWER | - |
dc.subject.keywordPlus | LEDS | - |
dc.subject.keywordPlus | PROBES | - |
dc.subject.keywordPlus | GAAS | - |
dc.subject.keywordPlus | ALAS | - |
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