Ultra-Wide Bandgap beta-Ga(2)O(3)Heterojunction Field-Effect Transistor Using p-Type 4H-SiC Gate for Efficient Thermal Management
DC Field | Value | Language |
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dc.contributor.author | Lee, Dongryul | - |
dc.contributor.author | Kim, Hyoung Woo | - |
dc.contributor.author | Kim, Janghyuk | - |
dc.contributor.author | Moon, Jeong Hyun | - |
dc.contributor.author | Lee, Geonyeop | - |
dc.contributor.author | Kim, Jihyun | - |
dc.date.accessioned | 2021-08-31T14:40:25Z | - |
dc.date.available | 2021-08-31T14:40:25Z | - |
dc.date.created | 2021-06-18 | - |
dc.date.issued | 2020-01-08 | - |
dc.identifier.issn | 2162-8769 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/58336 | - |
dc.description.abstract | The low thermal conductivity and the absence of effective acceptors limit the potential utility of beta-Ga(2)O(3)electronics. Herein, to generate an n-channel beta-Ga(2)O(3)heterojunction field-effect transistor (FET) with efficient thermal management, n-type beta-Ga(2)O(3)as a channel layer was integrated with p-type 4H-SiC as both a gate and a thermal drain via van der Waals interaction. The n-p beta-Ga2O3/4H-SiC heterojunction displayed typical rectifying behavior with an ideality factor of 1.4 and a rectification ratio of similar to 10(7). The fabricated beta-Ga(2)O(3)heterojunction FET operated in depletion mode with current saturation above the pinch-off voltage, which is consistent with the results of numerical device simulation. Excellent output and transfer characteristics were observed, including no hysteresis, low subthreshold swing (similar to 114 mV dec(-1)), and a high output current on/off ratio (similar to 10(8)). The numerical heat simulation indicated that the integration of beta-Ga(2)O(3)with 4H-SiC could greatly lower the peak operating temperature (by >70 degrees C), thereby improving the long-term reliability and stability of the beta-Ga2O3-based electronic devices. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | ELECTROCHEMICAL SOC INC | - |
dc.subject | BETA-GA2O3 | - |
dc.subject | MOSFETS | - |
dc.subject | JFETS | - |
dc.title | Ultra-Wide Bandgap beta-Ga(2)O(3)Heterojunction Field-Effect Transistor Using p-Type 4H-SiC Gate for Efficient Thermal Management | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Jihyun | - |
dc.identifier.doi | 10.1149/2162-8777/aba406 | - |
dc.identifier.scopusid | 2-s2.0-85088590316 | - |
dc.identifier.wosid | 000553782900001 | - |
dc.identifier.bibliographicCitation | ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, v.9, no.6 | - |
dc.relation.isPartOf | ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY | - |
dc.citation.title | ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY | - |
dc.citation.volume | 9 | - |
dc.citation.number | 6 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | BETA-GA2O3 | - |
dc.subject.keywordPlus | MOSFETS | - |
dc.subject.keywordPlus | JFETS | - |
dc.subject.keywordAuthor | Electron Devices | - |
dc.subject.keywordAuthor | gallium oxide | - |
dc.subject.keywordAuthor | Microelectrnics | - |
dc.subject.keywordAuthor | Semiconductor Materials | - |
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