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Interfacial Perpendicular Magnetic Anisotropy in Magnetic Tunnel Junctions Comprising CoFeB with FeNiSiB Layers

Authors
Kim, Do KyunLee, MinhyeokJoo, JunghoonKim, Young Keun
Issue Date
1월-2020
Publisher
KOREAN INST METALS MATERIALS
Keywords
Perpendicular magnetic anisotropy; Magnetic tunnel junction; Hybrid free layer; CoFeB; FeNiSiB
Citation
ELECTRONIC MATERIALS LETTERS, v.16, no.1, pp.35 - 40
Indexed
SCIE
SCOPUS
KCI
Journal Title
ELECTRONIC MATERIALS LETTERS
Volume
16
Number
1
Start Page
35
End Page
40
URI
https://scholar.korea.ac.kr/handle/2021.sw.korea/58500
DOI
10.1007/s13391-019-00183-2
ISSN
1738-8090
Abstract
Controlling ferromagnetic thickness (t) and properties such as saturation magnetization (M-s) and effective magnetic anisotropy constant (K-eff) has been regarded as critical for the performance of magnetic tunnel junctions (MTJs) with interfacial perpendicular magnetic anisotropy. Here, we report the effects of hybridizing a CoFeB layer with a FeNiSiB layer as part of a magnetic free layer structure. We deposited thin film stacks by magnetron sputtering on Si wafers with thermal oxides and carried out post-deposition heat treatment at 300 degrees C for 1 h in a vacuum under a magnetic field. We found that M-s and K-eff could be tuned by adding a layer of amorphous FeNiSiB. While the M-s and K-eff values were modified, the tunneling magnetoresistance (TMR) ratios of the MTJs were maintained, even though the CoFeB thickness was decreased by half. Moreover, an asymmetric bias voltage dependence of TMR was suppressed in the MTJs with FeNiSiB/CoFeB hybrid free layers due to improvements in the interface quality between the CoFeB/MgO interfaces. Graphic
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공과대학 (신소재공학부)
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