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Improvement of Characteristics of GaN Epilayer Grown on Patterned Ion Implanted Sapphire
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | BYUN, Dong Jin | - |
| dc.date.accessioned | 2021-08-31T17:48:28Z | - |
| dc.date.available | 2021-08-31T17:48:28Z | - |
| dc.date.created | 2021-04-22 | - |
| dc.date.issued | 2007-02-07 | - |
| dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/59906 | - |
| dc.publisher | 한국재료학회 | - |
| dc.title | Improvement of Characteristics of GaN Epilayer Grown on Patterned Ion Implanted Sapphire | - |
| dc.title.alternative | Improvement of Characteristics of GaN Epilayer Grown on Patterned Ion Implanted Sapphire | - |
| dc.type | Conference | - |
| dc.contributor.affiliatedAuthor | BYUN, Dong Jin | - |
| dc.identifier.bibliographicCitation | 제14회 한국반도체학술대회 | - |
| dc.relation.isPartOf | 제14회 한국반도체학술대회 | - |
| dc.relation.isPartOf | 제14회 한국반도체학술대회 | - |
| dc.citation.title | 제14회 한국반도체학술대회 | - |
| dc.citation.conferencePlace | KO | - |
| dc.citation.conferencePlace | 롯데호텔 제주 | - |
| dc.citation.conferenceDate | 2007-02-07 | - |
| dc.type.rims | CONF | - |
| dc.description.journalClass | 2 | - |
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