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A research of properties of p-GaN layers after rapid thermal annealing (RTA) treatment
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | BYUN, Dong Jin | - |
| dc.date.accessioned | 2021-08-31T17:48:56Z | - |
| dc.date.available | 2021-08-31T17:48:56Z | - |
| dc.date.created | 2021-04-22 | - |
| dc.date.issued | 2007-01-31 | - |
| dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/59911 | - |
| dc.publisher | Korea University | - |
| dc.title | A research of properties of p-GaN layers after rapid thermal annealing (RTA) treatment | - |
| dc.title.alternative | A research of properties of p-GaN layers after rapid thermal annealing (RTA) treatment | - |
| dc.type | Conference | - |
| dc.contributor.affiliatedAuthor | BYUN, Dong Jin | - |
| dc.identifier.bibliographicCitation | 2007 bk21 Korea Unversity-Osaka University Workshop On Advanced Device And Materials | - |
| dc.relation.isPartOf | 2007 bk21 Korea Unversity-Osaka University Workshop On Advanced Device And Materials | - |
| dc.relation.isPartOf | 2007 bk21 Korea Unversity-Osaka University Workshop On Advanced Device And Materials | - |
| dc.citation.title | 2007 bk21 Korea Unversity-Osaka University Workshop On Advanced Device And Materials | - |
| dc.citation.conferencePlace | KO | - |
| dc.citation.conferencePlace | Seoul, Korea | - |
| dc.citation.conferenceDate | 2007-01-30 | - |
| dc.type.rims | CONF | - |
| dc.description.journalClass | 2 | - |
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