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Characteristic properties of ZnO thin films grown by ALD techniques depending upon the deposition temperature and purging time

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dc.contributor.authorBYUN, Dong Jin-
dc.date.accessioned2021-08-31T17:49:07Z-
dc.date.available2021-08-31T17:49:07Z-
dc.date.created2021-04-22-
dc.date.issued2007-01-30-
dc.identifier.urihttps://scholar.korea.ac.kr/handle/2021.sw.korea/59913-
dc.publisherBK21 Center for Advanced Device Materials-
dc.titleCharacteristic properties of ZnO thin films grown by ALD techniques depending upon the deposition temperature and purging time-
dc.title.alternativeCharacteristic properties of ZnO thin films grown by ALD techniques depending upon the deposition temperature and purging time-
dc.typeConference-
dc.contributor.affiliatedAuthorBYUN, Dong Jin-
dc.identifier.bibliographicCitation2007 bk21 Korea Unversity-Osaka University Workshop On Advanced Device And Materials-
dc.relation.isPartOf2007 bk21 Korea Unversity-Osaka University Workshop On Advanced Device And Materials-
dc.relation.isPartOf2007 bk21 Korea Unversity-Osaka University Workshop On Advanced Device And Materials-
dc.citation.title2007 bk21 Korea Unversity-Osaka University Workshop On Advanced Device And Materials-
dc.citation.conferencePlaceKO-
dc.citation.conferencePlaceSeoul, Korea-
dc.citation.conferenceDate2007-01-30-
dc.type.rimsCONF-
dc.description.journalClass2-
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