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Characteristics of GaN-based HEMT on N+-Ion-Implanted Sapphire Substrates by MOCVD
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | BYUN, Dong Jin | - |
| dc.date.accessioned | 2021-08-31T17:49:41Z | - |
| dc.date.available | 2021-08-31T17:49:41Z | - |
| dc.date.created | 2021-04-22 | - |
| dc.date.issued | 2006-11-29 | - |
| dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/59919 | - |
| dc.publisher | The Institute of Electrical Engineers of Japan | - |
| dc.title | Characteristics of GaN-based HEMT on N+-Ion-Implanted Sapphire Substrates by MOCVD | - |
| dc.title.alternative | Characteristics of GaN-based HEMT on N+-Ion-Implanted Sapphire Substrates by MOCVD | - |
| dc.type | Conference | - |
| dc.contributor.affiliatedAuthor | BYUN, Dong Jin | - |
| dc.identifier.bibliographicCitation | INTERNATIONAL SYMPOSIUM ON DRY PROECESS(DPS 2006) | - |
| dc.relation.isPartOf | INTERNATIONAL SYMPOSIUM ON DRY PROECESS(DPS 2006) | - |
| dc.relation.isPartOf | INTERNATIONAL SYMPOSIUM ON DRY PROECESS(DPS 2006) | - |
| dc.citation.title | INTERNATIONAL SYMPOSIUM ON DRY PROECESS(DPS 2006) | - |
| dc.citation.conferencePlace | JA | - |
| dc.citation.conferencePlace | Nagoya, Japan | - |
| dc.citation.conferenceDate | 2006-11-29 | - |
| dc.type.rims | CONF | - |
| dc.description.journalClass | 1 | - |
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