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Growth Condition and Fabrication of Device for AlGaN/GaN Hetero-structure by MOCVDGrowth Condition and Fabrication of Device for AlGaN/GaN Hetero-structure by MOCVD
- Alternative Title
- Growth Condition and Fabrication of Device for AlGaN/GaN Hetero-structure by MOCVD
- Authors
- BYUN, Dong Jin
- Issue Date
- 19-5월-2006
- Publisher
- 한국재료학회
- Citation
- 2006년도 한국재료학회 춘계학술발표대회 및 제10회 신소재 심포지엄
- Conference Name
- 2006년도 한국재료학회 춘계학술발표대회 및 제10회 신소재 심포지엄
- Place
- KO
경상대학교
- Conference Date
- 2006-05-19
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