Construction of a Time-Of-Flight System for Beams Charge-Bred by using the Electron Beam Ion Source
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Liu, H.-L. | - |
dc.contributor.author | Son, H.-J. | - |
dc.contributor.author | Park, Y.-H. | - |
dc.contributor.author | Shin, T. | - |
dc.contributor.author | Kim, J. | - |
dc.date.accessioned | 2021-08-31T19:22:19Z | - |
dc.date.available | 2021-08-31T19:22:19Z | - |
dc.date.created | 2021-06-17 | - |
dc.date.issued | 2020 | - |
dc.identifier.issn | 0374-4884 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/60751 | - |
dc.description.abstract | A time-of-flight (TOF) system adopting single reflection has been constructed to identify the charge states of ions charge-bed by using the electron beam ion source (EBIS). The reflection allows for time focusing of the system in a compact manner. The EBIS under construction will enhance the charge states of rare isotopes produced by isotope separation on line (ISOL) so as to utilize the superconducting post linear accelerator efficiently. The TOF system consists of an ion-gate, reflection electrodes and multi-channel plates (MCP) detector. The maximum voltage on ions is 20 kV, and the beam optics design was performed using SIMION. In the front end of the TOF an ion gate is located to produce a single 5- to 10-ns pulse operating at a maximum voltage of ±1 kV. The circuit of the fast switching system, which converts -1 kV to 1 kV in a few ns, was simulated for an equivalent circuit of the gate by using LTspice. The TOF system is being fabricated and will be connected to a Cs ion source for initial beam tests with Cs1+ mixed with background ions. © 2020, The Korean Physical Society. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | Korean Physical Society | - |
dc.title | Construction of a Time-Of-Flight System for Beams Charge-Bred by using the Electron Beam Ion Source | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Park, Y.-H. | - |
dc.contributor.affiliatedAuthor | Shin, T. | - |
dc.identifier.doi | 10.3938/jkps.76.662 | - |
dc.identifier.scopusid | 2-s2.0-85083373021 | - |
dc.identifier.bibliographicCitation | Journal of the Korean Physical Society, v.76, no.7, pp.662 - 666 | - |
dc.relation.isPartOf | Journal of the Korean Physical Society | - |
dc.citation.title | Journal of the Korean Physical Society | - |
dc.citation.volume | 76 | - |
dc.citation.number | 7 | - |
dc.citation.startPage | 662 | - |
dc.citation.endPage | 666 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.identifier.kciid | ART002577461 | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.description.journalRegisteredClass | kci | - |
dc.subject.keywordAuthor | Charge breeding | - |
dc.subject.keywordAuthor | Electron beam ion source | - |
dc.subject.keywordAuthor | Fast switching | - |
dc.subject.keywordAuthor | Time of flight | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
(02841) 서울특별시 성북구 안암로 14502-3290-1114
COPYRIGHT © 2021 Korea University. All Rights Reserved.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.